This paper reports a continuous-time (CT) third-order delta-sigma modulator that features a single amplifier biquad (SAB) and a passive integrator to ...
The modulator operates at a sampling rate of 640 MHz and consumes 5.35 mW from 1.2 V and 1.8 V power supplies. It achieves a DR of 84.5 dB and a SNDR of 79.6 dB ...
33 References · A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS · A 16-mW 78-dB SNDR 10-MHz ...
A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS ... To read the full-text of this research, ...
A power-efficient single-loop continuous-time third-order sigma delta (ΔΣ) modulator that achieves a SNDR of 79.6 dB over a 10 MHz signal bandwidth and an ...
A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS ; Wei Wang1,2,3 ; Yan Zhu1,2,3 ; Chi-Hang ...
A 5.35-mW 10-MHz Single-Opamp Third-Order CT Δ Σ Modulator With CTC Amplifier and Adaptive Latch DAC Driver in 65-nm CMOS. IEEE Journal of Solid-State ...
Missing: ΔΣ | Show results with:ΔΣ
Nov 1, 2017 · A 5.35 mW 10 MHz Bandwidth CT Third-Order ∆∑ Modulator with Single Opamp Achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS.
Missing: ΔΣ | Show results with:ΔΣ
A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS.
... dB SNDR and 4-MHz Bandwidth at 225 MHz ... A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS.